Depth-dependent native-defect-induced layer disordering in Al<i>x</i>Ga1−<i>x</i>As-GaAs quantum well heterostructures

Abstract

Photoluminescence measurements on annealed single-well Alx Ga1−x As-GaAs quantum well heterostructures demonstrate that layer disordering caused by native defects is strongly depth dependent. The depth-dependent layer disordering, as well as the corresponding depth-dependent net carrier concentration, is a consequence of the re-equilibration of the V−Ga vacancy and the As+Ga antisite native defect concentrations via the crystal surface.