Solar-cell characteristics and interfacial chemistry of indium-tin-oxide/indium phosphide and indium-tin-oxide/gallium arsenide junctions

Abstract

The preparation of indium-tin-oxide (ITO)/p-InP and ITO/p-GaAs solar cells via ion-beam deposition, rf sputtering, and magnetron sputtering of ITO onto single-crystal InP and GaAs substrates is described. The properties of these solar cells are strongly affected by the fabrication conditions and are related to chemical modifications of the junctions. The solar power conversion efficiencies at air mass 2 of ITO/p-GaAs and ITO/p-InP solar cells are ?5 and ?14.4%, respectively.