Observation of compensating Ga vacancies in highly Si-doped GaAs

Abstract

Positron annihilation experiments have been performed to study the type and concentration of compensating defects in highly Si-doped GaAs grown by molecular-beam epitaxy (MBE). The results show the presence of both Ga vacancies and negative ion defects, each of which act as acceptors in $n$-type GaAs. The concentrations of both types of defects increase strongly for Si concentrations exceeding 5 \ifmmode\times\else\texttimes\fi{} ${10}^{18}$ ${\mathrm{cm}}^{\ensuremath{-}3}$. At [Si] \ensuremath{\ge}5 \ifmmode\times\else\texttimes\fi{} ${10}^{19}$ ${\mathrm{cm}}^{\ensuremath{-}3}$, the concentrations of Ga vacancies and negative ions are comparable, and their sum represents a substantial fraction of the total concentration of Si itself. The results provide direct evidence that Ga vacancies play an important role in the electrical deactivation of highly Si-doped MBE-grown GaAs.