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Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

Materials ScienceSemiconductorsMaterials EngineeringTernary Gesisn AlloysEngineeringIi-vi SemiconductorApplied PhysicsSemiconductor MaterialMultilayer HeterostructuresBand Gap EngineeringMolecular Beam EpitaxyGroup-iv SemiconductorsSemiconductor Nanostructures