Anticolliding design for monolithic passively mode-locked semiconductor lasers

Abstract

The performance of two-section, passively mode-locked semiconductor lasers is theoretically analyzed for different cavity designs. Placing the saturable absorber section close to an antireflection-coated facet leads to a substantial increase in output power and a reduction in amplitude and timing jitter. Moreover, it broadens the bias current region of stable passive mode-locking operation.