Publication | Closed Access
Volmer‐Weber growth mode of InN quantum dots on GaN by MOVPE
21
Citations
0
References
2009
Year
Wide-bandgap SemiconductorEngineeringQuantum Dot VolumeTrimethylindium Partial PressureSemiconductor NanostructuresSemiconductorsVolmer‐weber Growth ModeQuantum MaterialsCompound SemiconductorMaterials SciencePhysicsNanotechnologyCategoryiii-v SemiconductorInn Quantum DotsNanophysicsSurface ScienceApplied PhysicsGan Power DeviceThin Films
Abstract The growth of indium nitride quantum dots on c‐plane GaN/sapphire was investigated by metal‐organic vapour phase epitaxy using in situ spectroscopic ellipsometry and ex situ atomic force microscopy. Using an ammonia stabilisation for temperatures above 500 °C desorption of InN structures could be prevented during cool down. At a growth temperature of 520 °C and a trimethylindium partial pressure of 0.5 Pa (V/III ratio of 5000) we observe growth without a wetting layer in the Volmer‐Weber mode, indicated by the presence of InN quantum dots for sub‐monolayer coverages and a constant ratio of quantum dot volume to total InN amount. At this transport limited growth regime the typical quantum dot density of 7 × 10 10 cm –2 is independent from coverage. Coalescence occurs after 20 s growth time at an average structure diameter of 51 nm as expected for such a density. Smallest uncapped hexagonal structures are realised with an average diameter of 28 nm and a height of 3.1 nm (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)