Journal of Applied Physics · 1992 · 30 citations · 2 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsCeramicsSolid State PhysicsDefects In CeramicsDielectric CeramicsDielectric PropertiesDielectricsInorganic MaterialsPerovskite MaterialsCeramic DielectricsDefect PhysicsDefect StatesDefect StructuresElectrical CeramicsPerovskite DielectricsPolarizationPositron Annihilation Spectroscopy
The positron annihilation technique was adopted to study the defect structure of the dielectric ceramics with the nominal composition (Sr1−xBi2/3x) TiO3, where x was 0, 0.06, 0.11, 0.16, 0.21, 0.25, 0.29, 0.33, 0.36, 0.40, and 0.43, respectively. A two phase field occurs above 0.36. The results show that the dielectric properties are closely related to the defect structure which varies as bismuth content changes. It is clear that the complex defect was formed in the materials, where x ranged from 0.11 to 0.36. The existence of the complex-defect in the perovskite structure results in the typical ‘‘hopping ions’’ relaxation polarization.
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