Applied Physics Letters · 2007 · 244 citations · 20 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice ModelingSemiconductor SurfacesSurface PhysicsBipolar TechnologyDendrite FormationDendrite GrowthIon MigrationResistive SwitchingResistive Switching MaterialsVisual Inspection
Different coplanar Pt∕Ag structures were prepared by photolithography on SiO2 substrates, and Pt∕H2O∕Ag cells were formed by adding de-ionized H2O to the coplanar Pt∕Ag structures. The Pt∕H2O∕Ag cell is utilized here as a model system, due to the feasibility of visual inspection of the switching process. Bipolar switching was achieved for the cell. Scanning electron microscopy (SEM) investigations demonstrated that the growth and dissolution of Ag dendrites are responsible for the resistive switching. The Ag dendrite morphology is proposed to be the origin of the asymmetrical dissolution during the switching-off process, hence the bipolar nature of the switching characteristics.
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Quantized conductance atomic switch
Kazuya Terabe, Tsuyoshi Hasegawa, Tomonobu Nakayama et al. · Nature · 2005 · 1.2K citations
Reproducible switching effect in thin oxide films for memory applications
A. Beck, J. G. Bednorz, Ch. Gerber et al. · Applied Physics Letters · 2000 · 1.1K citations
Natural Sciences, Electrical Engineering, Materials Science +17