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The sulfurized InP surface
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1989
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Wide-bandgap SemiconductorEngineeringChemistryDesulfurizationSemiconductor DeviceSemiconductorsCompound SemiconductorSurface ReconstructionMaterials ScienceSemiconductor TechnologyElectrical EngineeringSemiconductor MaterialElemental SulfurSulfur TreatmentsMicroelectronicsCrystallographySurface ChemistrySurface ScienceApplied PhysicsSulfurized Inp SurfaceOptoelectronicsSulfur Treatment
Sulfur treatments have previously been shown to improve the electrical characteristics of InP and GaAs devices. This paper reports the results of an Auger/x-ray photoelectron spectroscopy investigation of the InP surface after sulfur treatment. It is shown that the sulfur remains on the surface bonded to indium. There is no indication of elemental sulfur or sulfur bonded to phosphorus. This suggests that the sulfur has replaced phosphorus on the surface and has filled the phosphorus vacancies.