Publication | Closed Access
The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells
11
Citations
22
References
2011
Year
Wide-bandgap SemiconductorEngineeringPhysicsGrowth InterruptionApplied PhysicsAluminum Gallium NitrideTrimethylindium Treatment TimeGan Power DeviceCarrier DynamicsCategoryiii-v SemiconductorOptoelectronicsCompound Semiconductor
| Year | Citations | |
|---|---|---|
Page 1
Page 1