Journal of Physics C Solid State Physics · 1985 · 178 citations · 14 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsMaterials PhysicsSemiconductor MaterialsAb Initio MethodsElectronic Band StructureElectronic SpectroscopyElectronic Structure Of SolidsSemiconductor PhysicsStrongly Correlated Electron SystemsAnderson TransitionAnderson-mott TransitionBand Structure CalculationCharge-density WavesConductionConduction BandMott TransitionTight-binding Theory
Angle-resolved photoemission spectroscopy (ARPES) measurements of the E(k/sub ///) band structure are reported for 1T-TaS2 and 2H-TaSe2 at temperatures where commensurate CDWS are well developed. Empirical tight-binding calculations of the band structure in the presence of the experimentally known CDW superlattice are also reported. In the case of the square root 13* square root 13 CDW in 1T-TaS2, experiment and theory both reveal a gross distortion of the band structure, in which the Ta-derived d band collapses into three sub-band manifolds separated by gaps. The thirteenth electron is predicted to reside in a conduction band only 50 meV wide, where it is susceptible to a Mott-Anderson transition. In the case of 2H-TaSe2, additional peaks are seen in the ARPES data in the presence of the CDW, but the effects are too weak to distinguish between a band-structure distortion and weak Umklapp associated with the 3*3 superlattice. Calculated densities of states, decomposed according to the inequivalent atomic sites, are presented.
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Charge carrier localization in pure and doped 1T-TaS2
P. Fazekas, Erio Tosatti · Physica B+C · 1980 · 159 citations
The low-temperature superstructures of 1T-TaSe2 and 2H-TaSe2
Remco de Brouwer, F. Jellinek · Physica B+C · 1980 · 135 citations