Epitaxial growth of yttria-stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition

Abstract

Yttria-stabilized zirconia (YSZ) films have been grown on Si (100) substrates by ion sputter deposition using ultrahigh vacuum system with in situ diagnostic equipment. Epitaxial conditions of YSZ (100) films were achieved between 700 and 800 °C by using an oxygen partial pressure around 3×10−4 Pa during the deposition. The film stoichiometry was measured by Rutherford backscattering spectrometry and nuclear reaction analysis. Crystalline quality of the YSZ layers was determined by x-ray diffraction, channeling of 4He+ ion beam, and in situ reflection high-energy electron diffraction pattern.