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The Deposition of Pb and PbO on Various Substrates by MOCVD Using a New Trinuclear Lead Precursor
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1999
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Materials EngineeringMaterials ScienceInorganic ChemistryHigh Molecular WeightEngineeringMaterial AnalysisSurface ScienceSolid-state ChemistryVolatile LeadThin Film Process TechnologyChemistryThin FilmsVarious SubstratesChemical DepositionInorganic MaterialChemical Vapor DepositionThin Film Processing
The synthesis and characterization of the trinuclear, uncharged and volatile lead(II) complex [Pb3(H–3tdci)2]·5H2O (tdci = 1,3,5-trideoxy-1,3,5-tris(dimethylamino)-cis-inositol) is described. Despite its rather high molecular weight, this compound can be used as a precursor for the deposition of thin films of lead and lead(II) oxide by metal organic chemical vapor deposition (MOCVD). Experiments were carried out under reduced pressure in a temperature range of 450–550°C, using stainless steel, copper, and copper-, silver-, and gold-coated silicon as substrates, showing a preferential deposition on conducting substrates. The nature of the deposited films was analyzed.