MOCVD Synthesis of Terbium Oxide Films and their Optical Properties

Abstract

Terbium oxide films are deposited on silicon substrates by metal‐organic (MO)CVD from a vapor of Tb(thd) 3 in argon. Terbium sesquioxide (C‐form) is realized in this process. Annealing of the films in air at 800 °C, followed by cooling in air, leads to the formation of Tb 4 O 7 . The Ar ion‐etching of the annealed films causes a reduction of Tb 4+ to Tb 3+ . Optical E g is estimated, photoluminescence spectra are investigated, and refractive indexes and dielectric constants are measured for terbium oxide films before and after annealing in air.