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On the Transport Properties of Microcrystalline Silicon at Low Temperatures
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1998
Year
Broad Temperature RangeEngineeringOptoelectronic DevicesChemistrySilicon On InsulatorSemiconductor NanostructuresSemiconductorsTransport PhenomenaMicrocrystalline SiliconCharge Carrier TransportMaterials SciencePhysicsOptoelectronic MaterialsThermal TransportSemiconductor MaterialSemiconductor Device FabricationHigh CrystallinityMicrofabricationNatural SciencesApplied PhysicsAmorphous SolidOptoelectronics
The dark and photoconductivity have been measured over a wide temperature range with a high crystallinity hydrogenated microcrystalline silicon (μc-Si:H) sample. It is the first time that photoconductivity over such a broad temperature range (down to 20 K) has been reported. Striking similarities in the temperature dependences of the dark and photoconductivity between μc-Si:H and some well studied materials, such as hydrogenated amorphous silicon, suggest that at low temperatures hopping of carriers between localized states dominates the transport properties of μc-Si:H.