Contactless electrical characterization and realization of <i>p</i>-type ZnSe

Abstract

ZnSe is a potentially useful optoelectronic material for applications requiring emission in the blue region of the spectrum. However, such applications necessitate the development of p-type material, for which reliable ohmic-contact technology does not exist. To avoid difficulties associated with contact formation while developing p-type material, we combine two contactless methods, reflectance-difference spectroscopy and inductive-coupled radio-frequency loss to determine carrier type and sheet resistance, respectively. Using this information we have prepared conducting p-type ZnSe by doping the material during growth with Li.