The Application of Temperature Gradient Zone Melting to Silicon Wafer Processing

Abstract

High voltage semiconductor devices fabricated with deep p‐type isolation regions are now practical. By employing the temperature gradient zone melting technique (TGZM), structures can now be fabricated that were not possible before using only solid‐state diffusion techniques. In this study, various processing alternatives are discussed and analyzed. High voltage SCR devices have been made using the TGZM approach and process limitations, based on the current state‐of‐the‐art, are described. Carrier lifetimes, blocking voltage capabilities, and leakage current levels have been measured and indicate that the processes used are effective.