Nature of defects in the Si-SiO2 system generated by vacuum-ultraviolet irradiation

Abstract

We have used high-frequency and quasi-static capacitance-voltage measurements to study the properties of interface states generated upon vacuum-ultraviolet irradiation under positive gate bias followed by neutralization of the holes trapped in the oxide. The data indicate the exclusive generation of fast donor-type states that anneal at room temperature. We propose that these states explain the turn-around effect and annealing of positive charge.