Improving Mobility of F-Doped SnO₂ Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition

Abstract

High mobility is required to suppress free-carrier absorption in the near-infrared (NIR) region. Toward this end, we investigated the properties of a F-doped SnO 2 (FTO) film deposited using low-pressure chemical vapor deposition (LPCVD) and found that the optimum deposition temperature varied with film thickness. On the basis of this result, we introduced a temperature gradient into LPCVD, which resulted in an improvement in the mobility of F-doped SnO 2 on glass to 77.5 cm 2 V -1 s -1 .