Electron mobility and energy gap of In0.53Ga0.47As on InP substrate

Abstract

Very uniform In0.53Ga0.47As was grown on InP by liquid phase epitaxy. The electron mobility is 8450 cm2/V sec at 300 K and 27700 cm2/V sec at 77 K. The mobility increases with decreasing temperature from 300 to 77 K in contrast to the results of In1−xGaxAs grown directly on GaAs by vapor phase epitaxy. The energy gap of this high-mobility material is 0.750 eV at room temperature.