Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors

Abstract

Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width of 1 microm. Corner mirrors that allow compact 90 degrees turns between two perpendicular waveguides are characterized. Measured propagation losses are approximately 0.4 dB/cm and approximately 0.5 dB/cm for 380-nm and 200-nm Si film, respectively, and mirror losses are approximately 1 dB. This allows the development of applications such as optical interconnects in integrated circuits over propagation distances larger than several centimeters.