4–40 GHz MMIC distributed active combiner with 3 dB gain

Abstract

The development of a 4–40 GHz monolithic InP HEMT distributed active combiner is reported. This MMIC had an average gain of 3.0 dB from each input, and a minimum reverse isolation of 20 dB from 4 to 40 GHz. The active devices in this MMIC were 0.25 μm lattice-matched InGaAs- InAlAs-InP HEMTs. CPW was used as the transmission medium with an overall chip dimension of 1.0×1.0 mm2.