Si+ implantation: A pretreatment method for diamond nucleation on a Si wafer

Abstract

Diamond films have been obtained by the hot-filament chemical vapor deposition method on a silicon wafer. The substrates were preimplanted by a Si+ ion beam (ion energy 25 keV, implantation dosage 2×1017 Si/cm2). X-ray diffraction, scanning electron microscopy, and Raman spectroscopy were used to characterize the structure of the synthesized films. The mechanisms for diamond nucleation on a Si wafer have been discussed. Surface stress is believed to be one of the most important factors for low pressure diamond nucleation on the Si wafer.