Fabrication of metal-epitaxial insulator-semiconductor field-effect transistors using molecular beam epitaxy of CaF2 on Si

Abstract

Fabrication of metal-epitaxial insulator-semiconductor field-effect transistors by molecular beam epitaxial growth of CaF2 on Si is reported for the first time. These devices have a room-temperature electron mobility of 300 cm2/Vs and a threshold voltage of 0.5 V. The breakdown voltage of the films ranges from ≳105 to ≳106 V/cm in different regions of the film. These devices will be important for the characterization and improvement of the interface transport properties of the CaF2/Si system.