Sputtered Ta<i>X</i> film properties for x-ray mask absorbers

Abstract

The characteristics of several elements for binary tantalum alloys, such as crystal structure, x-ray absorption, and dry-etching properties were systematically investigated. As a result, TaGe, TaSi, TaRe, and TaTi were selected as potential candidates for x-ray mask absorbers. We deposited these Ta alloys using conventional magnetron sputtering. The stress in the TaX films was controlled more precisely than in Ta films. It was found that TaGe was one of the most suitable materials based on x-ray absorption, stress control, and fine pattern fabrication.