Publication | Closed Access
Luminescence of heteroepitaxial zinc oxide
297
Citations
5
References
1988
Year
Materials ScienceLow-temperature PhotoluminescenceThin LayersPhotoluminescenceEngineeringNear-band-edge LuminescenceOptical PropertiesCrystal Growth TechnologyOxide ElectronicsApplied PhysicsGallium OxideHeteroepitaxial Zinc OxideChemistryLuminescence PropertyOptoelectronics
Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.
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