Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems - Concepedia

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Electrical resistivity and band-gap shift of Si-doped GaN and metal-nonmetal transition in cubic GaN, InN and AlN systems

12

Citations

15

References

2001

Year

J.R.L. Fernandez, C. Moysés Araújo, A. Ferreira da Silva, J. R. Leite, Bo E. Sernelius, A. Tabata, E. Abramof, V. A. Chitta, Clas Persson, Rajeev Ahuja,

Journal of Crystal Growth

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideCubic GanGan Power DeviceElectrical ResistivityBand-gap Shift

References

	Year	Citations

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