Silicon Micromachined W-Band Folded and Straight Waveguides Using DRIE Technique

Abstract

A silicon micromachined W-band folded waveguide and straight waveguide using deep reactive ion etching (DRIE) technology with stacked silicon substrates are presented for the first time. The dimensions of the folded waveguide are optimized using Ansoft's HFSS. The tolerances from the fabrication are analyzed using a straight waveguide. The measured insertion loss for the straight waveguide is between 0.23 ~ 0.42dB/cm over 85GHz ~ 105GHz. The insertion loss for the folded waveguide is between 0.41 ~ 0.69dB/cm over 90GHz ~ 110GHz. The result shows the waveguides have competitive performance compared to a commercial standard waveguide