Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects - Concepedia

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Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects

18

Citations

21

References

2014

Year

I. Pesic, D. Navarro, Masataka Miyake, M. Miura–Mattausch

Solid-State Electronics

Materials EngineeringElectrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsSic/sio2 Interface DefectsCarbideSemiconductor Device

References

	Year	Citations

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