Study of thermal oxidation and nitrogen annealing of luminescent porous silicon

Abstract

The properties of thermally oxidized porous Si were studied by Fourier-transform infrared spectroscopy and secondary ion mass spectroscopy. The results show that residual hydrogen exists in the 1000 °C/10 min thermally oxidized porous Si film in the form of SiOH bonds. The removal of these hydrogen atoms by annealing at 1000 °C in N2 reduces the photoluminescence.