XPS investigations of FeSi, FeSi₂and Fe implanted in Si and Ge

Abstract

Polycrystalline FeSi and FeSi2 samples have been examined by ESCA experiments. The valence band spectra show features that can be attributed to bonding and non-bonding states, as is the case for other transition metal silicides, where bonding is expressed in terms of hybridisation. Furthermore the authors have investigated the photoelectron spectra of samples of Si and Ge implanted with Fe at an energy of 40 keV in order to draw some conclusions regarding the character of the Fe-Si bonding in the disordered layer. The concentration of Fe as a function of the sample depth was also determined and compared with the results of Monte Carlo calculations.