Suppressed sidewall injection magnetotransistor with focused emitter injection and carrier double deflection

Abstract

We present a new linear magnetic field sensor (MFS) made in standard CMOS technology with a sensitivity of 1.26 percent/mT (1 percent/T ≡ 0.01 T <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> ). The device is a dual-collector lateral magneto-transistor (LMT) with suppressed injection of the emitter sidewalls, confinement of the injection to the center bottom of the emitter-base junction, and double deflection of carriers. Desirable collector current levels can be set without major loss of sensitivity by choosing from a wide range of operating points.