A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs–GaAs Heterostructure

Abstract

A new two-dimensional electron gas (2DEG) field-effect transistor (FET) which operates in an MOS transistor-like mode is fabricated on undoped AlGaAs–GaAs heterostructures grown by both molecular beam epitaxy and organometallic vapour phase epitaxy. This device with very simple structure is expected to have performance comparable to those of selectively doped heterostructure FETs and can easily be integrated.