Microribbon Field-Effect Transistors Based on Dithieno[2,3-d;2,3′-d′]benzo[1,2-b;4,5-b′]dithiophene Processed by Solvent Vapor Diffusion

Abstract

Well-defined DTBDT crystal microribbons were fabricated by a solution processing method named as solvent vapor diffusion directly on the surface. This procedure is based on exposing a drop cast solution to a saturated solvent vapor atmosphere and allows to tune the dimensions of the ribbons simply by controlling the concentration of the solution. The structural study indicates single crystallinity and a molecular organization in the ribbons that is considered to be favorable for the carrier transport along ribbon axis. In the device, individual crystal DTBDT organic field-effect transistors exhibit mobilities as high as 3.2 cm2 V–1 s–1 and on/off ratios up to 1 × 106. This processing approach can be further exploited for a broad range of other (macro)molecular semiconductors and additionally bears great potential for practical applications.