European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005 · 2005 · 27 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringWireless CommunicationsHigh-frequency Semiconductor DevicesImpedance MatchingMicrowave Integrated CircuitsMicrowave MixersMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsConversion LossFet MixersIntegrated Circuit MixersMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit DesignMonolithic Microwave Integrated Circuit MixersPower InputPower Output
A coplanar millimeter wave doubler MMIC covering the entire G-band was developed. Based on a 50 nm metamorphic HEMT technology, the circuit demonstrates an output power of more than -12 dBm between 150- and 220 GHz for an input power of 0 dBm. By increasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180- and 220 GHz. Good fundamental rejection was ensured by using a Marchand balun for balancing the design. The doubler was also used to provide the LO signal for a 170 to 200 GHz resistive FET mixer, yielding a conversion loss of 10 dB.
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70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers
Arnulf Leuther, A. Tessmann, M. Dammann et al. · 2003 · 46 citations
V. Radisic, M. Micovic, Ming Hu et al. · IEEE Microwave and Wireless Components Letters · 2001 · 31 citations
A comparison of W-band monolithic resistive mixer architectures
A.R. Barnes, P. D. Munday, R. Jennings et al. · 2003 · 26 citations