Supercurrent through InAs nanowires with highly transparent superconducting contacts

Abstract

One-dimensional superconducting transistors have been fabricated with individual InAs nanowires (NWs) using radio-frequency sputter cleaning followed by in situ metal deposition. Because of the highly transparent contacts formed in between the InAs NWs and the metals, supercurrent, multiple Andreev reflections and Shapiro steps under microwave radiation have been observed. Near pinch-off gate regions, Fabry-Perot interference and a normal conductance quantization with resonant features have been observed, which were found to be correlated with a supercurrent flow.