Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy

Abstract

Nominally lattice matched InAlN/GaN was grown by plasma-assisted molecular beam epitaxy, and the intrinsic microstructure was investigated via x-ray diffraction, transmission electron microscopy, and atom probe tomography. The InAlN showed a cellular structure, which was comprised of ∼10 nm wide Al-rich cores and ∼1 nm In-rich InAlN intercellular boundaries. Despite the strong laterally non-uniform In distribution, both vertical and lateral lattices are unperturbed by the cellular structure, as evidenced by strong thickness fringes in on-axis ω−2θ high resolution x-ray diffraction scans, coherence lengths derived from on-axis (0002) and off-axis (101¯2) ω−2θ high resolution x-ray diffraction scans, and a modified Williamson-Hall analysis for on-axis reflections.