Self-aligned submicron gate digital GaAs integrated circuits

Abstract

Digital normally-off (ENFET) GaAs integrated circuits have been fabricated using a novel self-aligned gate process that has produced high speed ring-oscillators with propagation delays as low as 25 ps and other low power circuits with power dissipation as small as 16 µW (at room temperature). The process is unique in that it permits control of parasitic FET source resistance and gate capacitance and also can achieve submicron gate lengths using conventional optical lithography.