Phase‐Change Memory in Bi₂Te₃ Nanowires

Abstract

Bi2Te3 nanowires exhibit the phase-change memory switching behavior. The as-grown nanowire has a linear current–voltage curve and a crystalline structure. After switching to the high-resistance state with a voltage pulse, the crystalline phases are partially changed to amorphous phases. This indicates that a crystalline–amorphous phase change in Bi2Te3 nanowires can be induced by a voltage pulse.