Physical Review Letters · 1993 · 55 citations · 12 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsElectron TransportNoise In Electronic DevicesNoise In Semiconductor DevicesP-n JunctionsSemiconductor PhysicsWide Band Gap SemiconductorsCapacitanceCoulomb BlockadeJunction CapacitanceNoise In Heterostructure DevicesNoise SuppressionNoise Suppression MechanismsSemiconductor NoiseThermionic Emission
We analyze noise suppression properties of a constant-current driven p-i-n heterojunction. It is shown that the junction capacitance and temperature determine the minimum measurement time required for obtaining sub-Poissonian electron injection. As the capacitance of the junction is reduced, the noise spectrum develops a ``regulated single electron emission peak'' at the single electron charging frequency, indicating regulation of the individual thermionic emission events and therefore a transition from macroscopic squeezing to Coulomb blockade regime.
12