High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequency

Abstract

The effect of plasma excitation frequency on the deposition of amorphous hydrogenated silicon in a silane glow-discharge system is investigated. A large increase in the deposition rate up to 21 Å/s is observed in the range between 25 and 150 MHz. Optical and electrical film parameters remain practically unchanged over this frequency range.