Publication | Open Access
Surface roughness and strain effects on ZnO nanorod growth
52
Citations
16
References
2006
Year
Residual Strain RelaxationEngineeringNanostructured SurfaceNanoengineeringNanomechanicsMaterials ScienceOxide HeterostructuresNanotechnologyOxide ElectronicsAluminum Gallium NitrideGallium OxideGan InterlayersCategoryiii-v SemiconductorMicrostructureVarious Gan InterlayersSurface ScienceApplied PhysicsThin FilmsZno Nanorod Growth
Vertically aligned ZnO nanorods were fabricated on Al2O3(001) substrates with various GaN interlayers by a catalyst-free metal-organic chemical vapor deposition. We observed that the shape and quality of ZnO nanorods grown on the GaN interlayers were considerably sensitive to the surface roughness of the interlayers. We also investigated orientation-dependent residual strain in the ZnO nanorods grown on Al2O3 substrates using polarized x-ray absorption fine structure (XAFS) measurements at Zn K edge. The XAFS revealed that the residual strain relaxation of Zn–O pairs in ab plane played a key role in the ZnO nanorod growth.
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