Enhanced silicon oxide film growth on Si (100) using electron impact

Abstract

The effect of electron beam impact on the oxidation of Si (100) by oxygen has been studied using x-ray photoelectron spectroscopy and Auger electron spectroscopy. It was found that electron beam impact can enhance the oxidation of Si (100) by oxygen at low temperatures, resulting in silicon dioxide formation. Furthermore, electron energy-dependent film growth experiments were carried out on O2(a) and an electron attachment resonance energy of ∼10.1 eV was found. A possible electron-induced oxidation mechanism is proposed which involves dissociative electron attachment for adsorbed O2 species and the formation of O and O− species from adsorbed O2−.