Low temperature formation of Si(111)7×7 surfaces from chemically prepared H/Si(111)-(1×1) surfaces

Abstract

Reflection high energy and low energy electron diffraction, along with high resolution photoemission studies reveal that ideally H-terminated Si(111) surfaces, H/Si(111)-(1×1) prepared by wet chemical etching, transform in ultrahigh vacuum into atomically clean Si(111)7×7 surfaces upon hydrogen desorption at temperatures as low as 550 °C.