Applied Physics Letters · 1964 · 22 citations · 6 references
EngineeringMaterials SciencePhysicsOpticsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsOptical Properties Of SemiconductorsOptoelectronic DevicesOptoelectronic MaterialsSemiconductor LasersWide Band Gap SemiconductorsElectroluminescenceLaser Gain MaterialsOptical Gain In SemiconductorsPhotoluminescenceStimulated Emission
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation R. C. C. Leite, J. E. Ripper, P. A. Guglielmi; LASER‐EXCITED PHOTOLUMINESCENCE OF OVERCOMPENSATED P+ GaAs AND THE BAND‐FILLING MODEL. Appl. Phys. Lett. 1 November 1964; 5 (9): 188–190. https://doi.org/10.1063/1.1754112 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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Thomas-Fermi Approach to Impure Semiconductor Band Structure
E. O. Kane · Physical Review · 1963 · 650 citations
BAND-FILLING MODEL FOR GaAs INJECTION LUMINESCENCE
D. F. Nelson, M. Gershenzon, A. Ashkin et al. · Applied Physics Letters · 1963 · 115 citations