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Strain-driven modification of the Ge/Si growth mode in stacked layers: a way to produce Ge islands having equal size in all layers

Materials EngineeringMaterials ScienceEqual SizeEpitaxial GrowthEngineeringDislocation InteractionStrain LocalizationApplied PhysicsStacked LayersStrain-driven ModificationSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsMicrostructure