Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition

Abstract

Homoepitaxial growth on a 6H-SiC (0001)Si face was carried out successfully at 1500°C by chemical vapor deposition. This temperature is 300°C lower than typical well-known growth temperatures. The p-n junction diodes were fabricated with the grown layers and showed very good rectification. The breakdown electric field was estimated to be 2.4×10 6 V/cm using the characteristics of the p-n junction diodes. This value is comparable with high-temperature grown layers. The fabricated p-n junction diodes showed blue light emission in the forward-biased region.