Publication | Closed Access
Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses
632
Citations
16
References
2003
Year
Optical MaterialsEngineeringFemtosecond Laser PulsesLaser ApplicationsLaser AblationLaser MaterialSemiconductorsOptical PropertiesTransparency RegionsPulsed Laser DepositionNanophotonicsUltrafast LasersPhotonicsPhysicsCompound SemiconductorsRelativistic Laser-matter InteractionHigh-spatial-frequency Periodic StructuresLaser-assisted DepositionSubwavelength Ripple FormationApplied PhysicsHigh-frequency StructuresLaser-surface InteractionsOptoelectronics
High-spatial-frequency periodic structures on the surfaces of InP, GaP, and GaAs have been observed after multiple-pulse femtosecond laser irradiation at wavelengths in the transparency regions of the respective solids. The periods of the structures are substantially shorter than the wavelengths of the incident laser fields in the bulk materials. In contrast, high-frequency structures were not observed for laser photon energies above the band gaps of the target materials.
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