Applied Physics Letters · 1984 · 38 citations · 8 references
EngineeringElectrical EngineeringPhysicsOpticsOptoelectronicsSemiconductor MaterialsLaser PhysicsOptical Properties Of SemiconductorsPolarization OpticsQuantum OptoelectronicsQuantum WellsSemiconductor LasersK·p Perturbation TheoryOptical GainOptical Gain In SemiconductorsPolarization-dependent GainQuantum Well GainQuantum Well HeterostructuresQuantum Well LasersQuantum Well Structures
Polarization-dependent lasing gain in GaAs/AlGaAs multi-quantum-well lasers is theoretically calculated and experimentally determined. The dipole moment representing the electron transition is calculated based on the k⋅P perturbation method. Gain broadening due to the intraband relaxation of electron wave is also taken into account. Experimentally measured gain profiles of TE and TM modes agree well with the theoretical results.
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Band structure of indium antimonide
E. O. Kane · Journal of Physics and Chemistry of Solids · 1957 · 3.7K citations