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1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb<inf>2</inf>Te<inf>3</inf> super-lattice films

DOI

14

Citations

0

References

2014

Year

M. Tai, Takasumi Ohyanagi, M. Kinoshita, Takahiro Morikawa, K. Akita, S. Kato, Hideki Shirakawa, Masaaki Araidai, Kenji Shiraishi, N. Takaura

Unknown Venue

Abstract

A 1T-1R pillar-type “topological-switching RAM” (TRAM) and the data retention of GeTe/Sb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> Te <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> super-lattice were investigated. Reset voltage of TRAM, 2 V, was 40 % of that of the conventional PCM with Ge <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> Sb <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> Te <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> . From data retention evaluation, the TRAM was found to endure the retention at 260 °C for 18 hours.